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(Total 190 Products )
DESCRIPTION
High Collector Current-IC= 5.0A
DC Current Gain
HFE= 70(Min)@IC= 4A
Low Saturation Voltage
VCE(sat)= 1.0V(Max)@IC= 4A

APPLICATIONS
Strobe flash applications. ...
DESCRIPTION
Collector Current- IC= 0.8A
Collector-Emitter Breakdown Voltage
V(BR)CEO= 30V(Min)
Complement to Type 2N2907

APPLICATIONS
Designed for general-purpose switching ...
DESCRIPTION
DC Current Gain
HFE= 40(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage
VCEO(SUS)= -45V(Min)
Complement to type BD135

APPLICATIONS
Designed for use as ...
DESCRIPTION
Collector Emitter Sustaining Voltage
VCEO(SUS) = 400V(Min. )
Collector Saturation Voltage
VCE(sat) = 2.0(Max) @ IC= 5.0A
Switching Time
TF= 0.9μ S(Max. )@ IC= ...
DESCRIPTION
High Collector Current-IC= 1.0A
High Collector-Emitter Breakdown Voltage
V(BR)CEO= 100V(Min)
Good Linearity of hFE
Low Saturation Voltage
Complement to Type ...
DESCRIPTION
Collector-Emitter Breakdown Voltage
V(BR)CEO= 60V(Min)
Low Collector-Emitter Saturation Voltage
VCE(sat)= 1.0V(Max) @IC= 2.0A
Complement to Type 2SB507
...
DESCRIPTION
Low Collector Saturation Voltage
VCE(sat)= 1.0(V)(Max)@ IC= 2A
DC Current Gain
HFE= 35-320 @ IC= 0.5A
Complement to Type 2SA671

APPLICATIONS
Designed for use ...
Isc Silicon NPN Power Transistor 2SD401
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25
Complement ...
DESCRIPTION
High Switching Speed
High Voltage
Built-in Ddamper Ddiode

APPLICATIONS
For use in horizontal deflection circuits of large screen
Color TV receivers
Isc Silicon PNP Darlington Power Transistor TIP147
DESCRIPTION
High DC Current Gain-
HFE = 1000(Min)@ IC= -5A
Collector-Emitter Sustaining Voltage-
VCEO(SUS) = -100V(Min) ...
DESCRIPTION
High Voltage
High Speed Switching

APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
FEATURES
With TO-220AB insulated package

Suitables for general purpose applications where gate high sensitivity is Required. Application on 4Q such as phase control and static ...
Isc Silicon NPN Power Transistor TIP3055

DESCRIPTION
Excellent Safe Operating Area
DC Current Gain-: HFE=20-70@IC = 4A
Collector-Emitter Saturation Voltage-: VCE(sat)= 1.1 ...
DESCRIPTION
Collector Current: IC= 4A
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A
High Collector Power Dissipation
Complement to Type 2SB857

APPLICATIONS ...
DC Current Gain
HFE= 25(Min)@IC = -1.5A
Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min)
Complement to Type TIP35C
Current Gain-Bandwidth Product
FT= ...
Isc Silicon NPN Power Transistor 2SC5197
DESCRIPTION
Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 6A
Good Linearity of hFE
Complement to Type 2SA1940

...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
High Power Dissipation
DARLINGTON

APPLICATIONS
Automotive ignition
Switching regulator
Motor ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
High DC Current Gain-
: HFE= 100(Min)@ (VCE= -2V, IC= -3A)
Low Saturation Voltage-
: VCE(sat)= ...
Isc Silicon NPN Power Transistor 2N3055
Excellent Safe Operating Area
DC Current Gain-hFE=20-70@IC = 4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ...
DESCRIPTION
Collector Emitter Sustaining Voltage
VCEO(SUS)= 60V(Min)
High DC Current Gain
HFE= 100(Min)@ (VCE= 2V, IC= 3A)
Low Saturation Voltage
VCE(sat)= 0.3V(Max)@ (IC= ...
Collector Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
DC Current Gain-
: HFE = 100(Min) @ IC= 50mA
Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max. )@ IC= ...
High DC Current Gain-
: HFE = 1000(Min)@ IC= 3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ ...
Collector Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
High DC Current Gain-
: HFE = 750(Min)@IC= 2A
Complement to Type 2N6036

APPLICATIONS
Designed for general ...
DESCRIPTION
Excellent Safe Operating Area
DC Current Gain
HFE=20-70@IC= -4A
Collector-Emitter Saturation Voltage
VCE(sat)= -1.1V(Max)@ IC= -4A
Complement to Type 2N3055
...
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
High Reliability

APPLICATIONS
Switching regulators
Ultrasonic generators
High ...
DESCRIPTION
Collector-Emitter Breakdown Voltage
V(BR)CEO= 120V(Min)
Good Linearity of hFE
Complement to Type 2SB688

APPLICATIONS
Audio frequency power amplifier ...
DESCRIPTION
Collector-Emitter Breakdown Voltage-
V(BR)CEO= -60V(Min)
High Switching Speed
Low Saturation Voltage-
VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
Wide Area of ...
DESCRIPTION
High Voltage
High Speed Switching

APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems

Last Login Date: Jun 29, 2017

Business Type: Manufacturer/Factory, Trading Company

Main Products: Semiconductor, Power Transistor, Darlington Transistor, Semiconductor Component, Mosfet Transistor, Electronic Transistor, RF Mosfet Power Transistor, PNP Transistor, Npn Transistor