Product List

(Total 190 Products )
Isc Silicon NPN Power Transistor BU508AF
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed

APPLICATIONS
Designed for use in ...
Isc Thyristors 2P4M
APPLICATIONS
Electric blanket, electronic jar, various temper-
Ature control.
Electric sewing machine, speed control of mi-
Niature type motor.
Light ...
Isc Triacs BTA08
Features
With TO-220AB Insulated package
Suitable for general purpose AC switching, which
Can be used as an ON/OFF function in applications
Such as static ...
MJ410 MJ413 MJ423 MJ802 MJ1000
MJ1001 MJ2500 MJ2501 MJ2955 MJ2955A
MJ3000 MJ3001 MJ4033 MJ4034 MJ4035
MJ4502 MJ10012 MJ15001 MJ15002 MJ15003
MJ15004 MJ15015 MJ15016 MJ15022 ...
Isc Silicon NPN Power Transistor 2SD1163
DESCRIPTION
Collector Current: IC= 7A
Collector-Emitter BreakdownVoltage-: V(BR)CEO= 120V(Min. )

APPLICATIONS
Designed for TV ...
2SB PRODUCT LIST
2SB
2SB434 2SB507 2SB509 2SB511 2SB512 2SB514
2SB536 2SB546 2SB546A 2SB548 2SB552 2SB553
2SB554 2SB555 2SB556 2SB557 2SB566 2SB566A
2SB595 2SB596 2SB600 ...
Isc Triacs BTB04
FEATURES
With TO-220AB non insulated package
Suitables for general purpose applications where gate high sensitivity is
Required.
Application on 4Q such as ...
BD
BD131 BD132 BD135 BD137 BD139
BD136 BD138 BD140 BD142 BD175
BD177 BD179 BD176 BD178 BD180
BD190 BD203 BD204 BD230 BD231
BD233 BD235 BD237 BD234 BD236
BD238 BD239 BD239A ...
APPLICATIONS
Electric blanket, electronic jar, various temper-
Ature control.
Electric sewing machine, speed control of mi-
Niature type motor.
Light display equipment, lamp ...
Isc Silicon NPN Power Transistor 2SC3679
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
High Switching Speed
High Reliability

APPLICATIONS ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V (Min. )
High Switching Speed

APPLICATIONS
Designed for audio frequency power amplifier and low Speed high ...
Isc Silicon NPN Power Transistor 2SC2625
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
High Reliability

APPLICATIONS ...
DESCRIPTION
Collector Current -IC= 15A
High DC Current Gain-hFE= 750(Min)@ IC= 6A
Complement to Type BDW84/A/B/C

APPLICATIONS
Designed for general purpose amplifier and low ...
Isc Silicon NPN Power Transistor 2SC3834
DESCRIPTION
Low Collector Saturation Voltage
VCE(sat)= 0.5V(Max)@ IC=3A
Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V (Min) ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed
Built-in Damper Diode

APPLICATIONS
Designed for use in horizontal deflection ...
DESCRIPTION
DC Current Gain-
: HFE =60-200@ IC= 1A
Low Collector Saturation Voltage-
: VCE(sat)=1.0V(Max)@IC=2.0A, IB=0.2A

APPLICATIONS
Designed for low frequency power ...
Isc Silicon NPN Power Transistors 2SD476
DESCRIPTION
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC=2A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ...
DESCRIPTION
Excellent Safe Operating Area
High Voltage, High Speed
Low Saturation Voltage

APPLICATIONS
Designed for high-voltage, high-speed, power switching in Inductive ...
DESCRIPTION
Collector Current -IC= 15A
High DC Current Gain-hFE= 750(Min)@ IC= 6A
Complement to Type BDW84D

APPLICATIONS
Designed for general purpose amplifier and low speed ...
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
Wide Area of Safe Operation
Complement to Type 2SB861

APPLICATIONS
Designed for low frequency ...
DESCRIPTION
DC Current Gain Specified to 15 Amperes-
: HFE =20-150@ IC= -5.0Adc
=5.0(Min)@ IC= -5Adc
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80Vdc(Min)
Complement ...
DESCRIPTION
DC Current Gain Specified to 15 Amperes-: HFE =20-150@ IC= 5.0A
=5.0(Min)@ IC=15A
Collector-Emitter Sustaining Voltage-: VCEO(SUS)=80Vdc(Min)
Complement to Type ...
Isc Silicon PNP Power Transistor 2SB817
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
Good Linearity of hFE
High Current Capability
Wide Area of ...
Isc Silicon NPN Power Transistor 2SD1555
DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
Low Saturation Voltage
Built-in Damper Diode
...
Isc Silicon PNP Power Transistors TIP32C
DESCRIPTION
DC Current Gain -hFE = 25(Min)@ IC= -1.0A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- TIP32; -60V(Min)- ...
Isc Silicon PNP Power Transistor 2SA1006
DESCRIPTION
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180Vdc (Min)
Wide Area of Safe Operation ...
Isc Silicon NPN Power Transistor 2SC5296

DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode

APPLICATIONS ...
Isc Silicon PNP Power Transistor BD136
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -45V(Min)
Complement to ...

Last Login Date: Jun 26, 2017

Business Type: Manufacturer/Factory, Trading Company

Main Products: Semiconductor, Power Transistor, Darlington Transistor, Semiconductor Component, Mosfet Transistor, Electronic Transistor, RF Mosfet Power Transistor, PNP Transistor, Npn Transistor