Product List

(Total 190 Products )
APPLICATIONS
Electric blanket, electronic jar, various temper-
Ature control.
Electric sewing machine, speed control of mi-
Niature type motor.
Light display equipment, lamp ...
Isc Triacs BTA08
Features
With TO-220AB Insulated package
Suitable for general purpose AC switching, which
Can be used as an ON/OFF function in applications
Such as static ...
Isc Silicon PNP Power Transistors TIP42C
DESCRIPTION
DC Current Gain -hFE = 30(Min)@ IC= -0.3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- ...
FEATURES
With TO-126P package

Designed for use in general purpose bidirectional switching and phase Control applications, which are intended to be interfaced directly to ...
2SC PRODUCT LIST
2SC
2SC508 2SC515 2SC643 2SC643A 2SC789 2SC792
2SC867 2SC940 2SC1027 2SC1050 2SC1051 2SC1061
2SC1079 2SC1080 2SC1096 2SC1098 2SC1098A 2SC1106
2SC1116 2SC1162 ...
APPLICATIONS
For use in applications requiring high Bidirectional blocking voltage capability And high thermal cycling performance.
Typical applications include motor co-Ntrol, ...
FEATURES
With TO-126P package
Designed for use in general purpose bidirectional switching and phase Control applications, which are intended to be interfaced directly to ...
2N
2N3054 2N3054A 2N3055 2N3055A 2N3055A 2N3232 2N3233 2N3234
2N3235 2N3226 2N3237 2N3441 2N3442 2N3445 2N3446 2N3447
2N3448 2N3584 2N3585 2N3716 2N3740 2N3741 2N3771 2N3772 ...
DESCRIPTION
High Switching Speed
High Voltage
Built-in Integrated Diode

APPLICATIONS
Designed for use in horizontal deflection circuits of Colour TV receivers.
Isc N-Channel MOSFET Transistor IRF630
DESCRIPTION Drain Current ID=9A@TC=25
Drain Source Voltage-
: VDSS= 200V(Min)
Static Drain-Source On-Resistance
: RDS(on) = ...
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ (IC= -3A, IB= -0.1A)

APPLICATIONS
Designed for switching ...
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
Good Linearity of hFE

APPLICATIONS
Designed for ...
Isc Silicon NPN Power Transistor MJE340
DESCRIPTION
Collector Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
DC Current Gain-
: HFE = 100(Min) @ IC= 50mA
Low Collector ...
Isc Silicon NPN Power Transistor MJE18004
DESCRIPTION
Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
High Switching Speed

APPLICATIONS
Designed for use in 220V ...
Isc Silicon NPN Power Transistor 2SC4549
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
High DC Current Gain-
: HFE= 100(Min)@ (VCE= 2V, IC= 1A)
Low ...
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
High Reliability

APPLICATIONS
Switching regulators
Ultrasonic generators
High ...
Excellent Safe Operating Area
DC Current Gain-hFE=20-70@IC = 4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
Complement to Type MJ2955

APPLICATIONS ...
Isc Silicon NPN Power Transistor 2SC3320
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
High Reliability

APPLICATIONS ...
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min. )
High DC Current Gain-
: HFE= 1000(Min. )@IC= 20A
Low Collector Saturation Voltage-
: VCE (sat)= ...
High Collector Current-IC= 3.0A
Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
Good Linearity of hFE
Complement to Type 2SB772

APPLICATIONS
Suited for ...
DC Current Gain-
: HFE= 25(Min)@IC = 1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
Complement to Type TIP36C
Current Gain-Bandwidth Product-
: FT= ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed

APPLICATIONS
Designed for use in horizontal deflection circuits of Color TV ...
Isc Silicon PNP Power Transistor TIP36C
DESCRIPTION
DC Current Gain-
: HFE= 25(Min)@IC = -1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
Complement to ...
Isc Silicon PNP Power Transistor 2SA1006
DESCRIPTION
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180Vdc (Min)
Wide Area of Safe Operation ...
High Collector Current-IC= 3.0A
Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
Good Linearity of hFE
Complement to Type 2SB772

APPLICATIONS
Suited for ...
High Reliability
Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -2A
Wide Area of Safe Operation

APPLICATIONS
Designed for low frequency power amplifier ...
Isc Silicon NPN Power Transistor 2SC5200
DESCRIPTION
High Current Capability
High Power Dissipation
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min)
Complement ...
Isc Silicon PNP Power Transistor 2SA968
DESCRIPTION
Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min)
Good Linearity of hFE
Complement to Type 2SC2238

APPLICATIONS ...

Last Login Date: Jun 29, 2017

Business Type: Manufacturer/Factory, Trading Company

Main Products: Semiconductor, Power Transistor, Darlington Transistor, Semiconductor Component, Mosfet Transistor, Electronic Transistor, RF Mosfet Power Transistor, PNP Transistor, Npn Transistor