Product List

(Total 190 Products )
Isc Silicon NPN Power Transistor 2SD880
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) ...
Isc Silicon NPN Power Transistor BD237

DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= 0.15A
Complement to Type BD238

APPLICATIONS
Designed for use in 5~10 watt audio ...
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= -0.15A
Complement to Type BD233/235/237

APPLICATIONS
Designed for use in 5~10 watt audio amplifiers and drivers Utilizing ...
Isc Silicon NPN Power Transistor 2SD1047
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
Good Linearity of hFE
High Current Capability
Wide Area of ...
High Collector Current-IC= 3.0A
Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
Good Linearity of hFE
Complement to Type 2SB772

APPLICATIONS
Suited for ...
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -80V(Min)
Complement to type BD139

APPLICATIONS
Designed for ...
Isc Silicon NPN Power Transistor 2SC2336
DESCRIPTION
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
Wide Area of Safe Operation ...
Isc Silicon PNP Power Transistor 2SA1006
DESCRIPTION
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180Vdc (Min)
Wide Area of Safe Operation ...
Isc Silicon PNP Power Transistors TIP32C
DESCRIPTION
DC Current Gain -hFE = 25(Min)@ IC= -1.0A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- TIP32; -60V(Min)- ...
DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode

APPLICATIONS
Color TV horizontal deflection output ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min)
Fast Switching speed

APPLICATIONS
Color TV horizontal output applications
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed

APPLICATIONS
Designed for use in horizontal deflection circuits of Color TV ...
DESCRIPTION
High DC Current Gain
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V (Min)
Low Collector-Emitter Saturation Voltage-

APPLICATIONS
Designed for ...
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min. )
High DC Current Gain-
: HFE= 1000(Min. )@IC= 20A
Low Collector Saturation Voltage-
: VCE (sat)= ...
DESCRIPTION
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 5A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
Good Linearity of hFE
Complement to Type ...
DESCRIPTION
High Current Capability-IC= 5A(DC)
DC Current Gain_
: HFE = 45-450(Min) @ IC= 0.5 A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 75V(Min. )

APPLICATIONS ...
DESCRIPTION
High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
High Switching Speed
High Reliability

APPLICATIONS
Ultrahigh-definition CRT display horizontal deflection Output ...
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
Collector Power Dissipation
: PC= 25 W(Max)

APPLICATIONS
Designed for low frequency power amplifier ...
Isc Silicon NPN Power Transistor 2SC3679
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
High Switching Speed
High Reliability

APPLICATIONS ...
Isc Silicon NPN Power Transistor 2SC4549
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
High DC Current Gain-
: HFE= 100(Min)@ (VCE= 2V, IC= 1A)
Low ...
Isc Silicon NPN Power Transistor BUT11AF
DESCRIPTION
High Voltage
High Speed Switching

APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
Isc Silicon PNP Power Transistor BD136
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= -0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -45V(Min)
Complement to ...
Isc Silicon NPN Power Transistor 2SC5296

DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode

APPLICATIONS ...
Isc Silicon NPN Power Transistor BU406
DESCRIPTION
High Voltage: VCEV= 400V(Min)
Fast Switching Speed-
: TF= 750ns(Max)
Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
High Switching Speed

APPLICATIONS
Designed for use in horizontal deflection circuits of Large ...
DESCRIPTION
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180Vdc (Min)
Wide Area of Safe Operation
Complement to Type 2SC2336

APPLICATIONS ...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed

APPLICATIONS
Designed for use in horizontal deflection circuits of Color TV ...
Isc Silicon NPN Power Transistor 2SD1651
DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode


APPLICATIONS ...

Last Login Date: Jun 26, 2017

Business Type: Manufacturer/Factory, Trading Company

Main Products: Semiconductor, Power Transistor, Darlington Transistor, Semiconductor Component, Mosfet Transistor, Electronic Transistor, RF Mosfet Power Transistor, PNP Transistor, Npn Transistor