Product List

(Total 190 Products )
Isc Silicon NPN Power Transistor BDW93C
DESCRIPTION
Collector Current -IC= 12A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A
80V(Min)- ...
DESCRIPTION
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
Good Linearity of hFE

APPLICATIONS ...
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= -0.15A
Complement to Type BD233/235/237

APPLICATIONS
Designed for use in 5~10 watt audio amplifiers and drivers Utilizing ...
Isc Silicon PNP Darlington Power Transistor BD646
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
High DC Current Gain
: HFE= 750(Min) @IC= -3A
Low ...
Isc Silicon PNP Power Transistor 2SA968
DESCRIPTION
Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min)
Good Linearity of hFE
Complement to Type 2SC2238

APPLICATIONS ...
Isc Silicon NPN Power Transistor 2SD1878
DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode

APPLICATIONS ...
Isc Silicon NPN Darlington Power Transistor TIP120
DESCRIPTION
High DC Current Gain-
: HFE = 1000(Min)@ IC= 3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ...
Isc Silicon PNP Power Transistor TIP36C
DESCRIPTION
DC Current Gain-
: HFE= 25(Min)@IC = -1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
Complement to ...
DESCRIPTION
DC Current Gain Specified to 15 Amperes-
: HFE =20-150@ IC= -5.0Adc
=5.0(Min)@ IC= -5Adc
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80Vdc(Min)
Complement ...
DESCRIPTION
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
Wide Area of Safe Operation
Complement to Type 2SB861

APPLICATIONS
Designed for low frequency ...
DESCRIPTION
High DC Current Gain
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V (Min)
Low Collector-Emitter Saturation Voltage-

APPLICATIONS
Designed for ...
Isc Silicon NPN Power Transistor 2SC5297
DESCRIPTION
High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
High Switching Speed
High Reliability


APPLICATIONS ...
DESCRIPTION
High Current Capability-IC= 5A(DC)
DC Current Gain_
: HFE = 45-450(Min) @ IC= 0.5 A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 75V(Min. )

APPLICATIONS ...
Isc Silicon NPN Power Transistor 2SD2499
DESCRIPTION
High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
Low Saturation Voltage
Built-in Damper Diode
...
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
High Switching Speed
Built-in Damper Diode

APPLICATIONS
Designed for use in horizontal deflection ...
Isc Silicon NPN Darlington Power Transistor BD681
DESCRIPTION
Collector Emitter Breakdown Voltage_
: V(BR)CEO = 100V
DC Current Gain_
: HFE = 750(Min) @ IC= 1.5 A
Complement ...
Isc Silicon NPN Power Transistor MJE340
DESCRIPTION
Collector Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
DC Current Gain-
: HFE = 100(Min) @ IC= 50mA
Low Collector ...
DESCRIPTION
DC Current Gain-
: HFE= 25(Min)@IC = 1.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
Complement to Type TIP36C
Current Gain-Bandwidth Product- ...
DESCRIPTION
Excellent Safe Operating Area
High Voltage, High Speed
Low Saturation Voltage

APPLICATIONS
Designed for high-voltage, high-speed, power switching in Inductive ...
DESCRIPTION
Collector Current -IC= 15A
High DC Current Gain-hFE= 750(Min)@ IC= 6A
Complement to Type BDW84D

APPLICATIONS
Designed for general purpose amplifier and low speed ...
Isc Silicon PNP Power Transistor 2SA1941
DESCRIPTION
Low Collector Saturation Voltage-
: VCE(sat)=- 2.0V(Min) @IC=- 7A
Good Linearity of hFE
Complement to Type 2SC5198
...
Isc Silicon NPN Power Transistor BD139
DESCRIPTION
DC Current Gain-
: HFE= 40(Min)@ IC= 0.15A
Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 80V(Min)
Complement to type ...
Excellent Safe Operating Area
DC Current Gain-hFE=20-70@IC = 4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
Complement to Type MJ2955

APPLICATIONS ...
Isc Silicon PNP Power Transistor 2SB1274
DESCRIPTION
High Reliability
Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -2A
Wide Area of Safe Operation
...
Isc Silicon PNP Power Transistor 2SA1943
DESCRIPTION
High Current Capability
High Power Dissipation
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min) ...
Isc Silicon NPN Power Transistor 2SC5198
DESCRIPTION
Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 7A
Good Linearity of hFE
Complement to Type 2SA1941
...
High Reliability
Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -2A
Wide Area of Safe Operation

APPLICATIONS
Designed for low frequency power amplifier ...
Isc Silicon NPN Darlington Power Transistor 2N6039
DESCRIPTION
Collector Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
High DC Current Gain-
: HFE = 750(Min)@IC= 2A ...

Last Login Date: Dec 07, 2017

Business Type: Manufacturer/Factory, Trading Company

Main Products: Semiconductor, Power Transistor, Darlington Transistor, Semiconductor Component, Mosfet Transistor, Electronic Transistor, RF Mosfet Power Transistor, PNP Transistor, Npn Transistor